Optical modulating device having gate structure

Patent metadata

Field	Value
Publication number	US-10012851-B2
Application number	US-201615214919-A
Country	US
Kind code	B2
Filing date	Jul 20, 2016
Priority date	Jul 27, 2015
Publication date	Jul 3, 2018
Grant date	Jul 3, 2018

Abstract

An optical modulating device includes a permittivity change layer having a variable permittivity, a dielectric layer disposed on the permittivity change layer, a nanoantenna disposed on the dielectric layer, and a light-emitting structure disposed adjacent to the permittivity change layer.

First claim

What is claimed is:

1. An optical modulating device comprising:
a permittivity change layer having a variable permittivity;
a dielectric layer disposed on the permittivity change layer;
a nanoantenna disposed on the dielectric layer; and
a light-emitting structure disposed adjacent to the permittivity change layer, and configured to emit light having a greater wavelength than light incident on the light-emitting structure in response to the incident light, as an excitation source.

2. The optical modulating device of claim 1 , wherein the light-emitting structure comprises light-emitting particles.

3. The optical modulating device of claim 2 , further comprising an insulating material layer on which the permittivity change layer is disposed, the light-emitting particles being embedded in the insulating material layer.

4. The optical modulating device of claim 1 , wherein the light-emitting structure comprises a semiconductor quantum well or a semiconductor PN junction.

5. The optical modulating device of claim 1 , further comprising a metal layer on which the light-emitting structure, the permittivity change layer, the dielectric layer, and the nanoantenna are sequentially disposed.

6. The optical modulating device of claim 1 , wherein the permittivity change layer comprises a transparent conductive oxide.

7. An optical apparatus comprising the optical modulating device of claim 1 .

8. An optical modulating device comprising:
a permittivity change layer having a variable permittivity;
a dielectric layer disposed on the permittivity change layer;
a nanoantenna disposed on the dielectric layer;
a light-emitting structure disposed adjacent to the permittivity change layer; and
a voltage-applier configured to apply a voltage between the permittivity change layer and the nanoantenna.

9. The optical modulating device of claim 8 , wherein the permittivity change layer comprises an active area in which a carrier concentration changes based on the applied voltage.

10. An optical modulating device comprising:
a substrate;
nanoantennas disposed on the substrate and spaced apart from one another;
a dielectric layer disposed on the nanoantennas;
a permittivity change layer disposed on the dielectric layer and having a variable permittivity; and
a light-emitting structure disposed on the permittivity change layer and between the nanoantennas.

11. The optical modulating device of claim 10 , wherein the light-emitting structure is configured to emit light having a greater wavelength than light incident on the light-emitting structure in response to the incident light, as an excitation source.

12. The optical modulating device of claim 10 , wherein the light-emitting structure comprises light-emitting particles.

13. The optical modulating device of claim 12 , further comprising an insulating material layer disposed on the permittivity change layer, the light-emitting particles being embedded in the insulating material layer.

14. The optical modulating device of claim 10 , wherein the light-emitting structure comprises a semiconductor quantum well or a semiconductor PN junction.

15. The optical modulating device of claim 10 , further comprising an insulating material layer covering the permittivity change layer and the light-emitting structure.

16. The optical modulating device of claim 10 , further comprising voltage-appliers configured to apply respective voltages between the respective nanoantennas and the permittivity change layer.

17. The optical modulating device of claim 10 , wherein the permittivity change layer comprises a transparent conductive oxide.

18. An optical apparatus comprising:
the optical modulating device of claim 10 ; and
a backlight configured to provide light to the optical modulating device.

19. The optical apparatus of claim 18 , further comprising a driving circuit disposed on the substrate and configured to control voltages applied to the respective nanoantennas.

20. An optical modulating device comprising:
a permittivity change layer having a variable permittivity;
a dielectric layer disposed on the permittivity change layer;
a light-emitting structure disposed adjacent to the permittivity change layer; and
a nanoantenna disposed on the dielectric layer, the nanoantenna comprising a conductive material and having a shape with a dimension of a sub-wavelength.

21. An optical modulating device comprising:
a permittivity change layer having a variable permittivity, the variable permittivity changing according to an electrical signal;
a dielectric layer disposed on the permittivity change layer;
a nanoantenna disposed on the dielectric layer; and
a light-emitting structure disposed adjacent to the permittivity change layer.

Assignees

• Samsung Electronics Co Ltd
• California Inst Of Techn

Inventors

• Han Seunghoon
• Sokhoyan Ruzan
• Atwater Harry
• Kafaie Ghazaleh
• PALA Ragip
• Lu Yu-Jung
• Lee Ho Wai
• Huang Yao-Wei
• THYAGARAJAN Krishnan

Classifications

• G02F1/0147

  based on thermo-optic effects (G02F1/132 takes precedence) · CPC title

• G02F1/0121 Primary

  Operation of devices; Circuit arrangements, not otherwise provided for in this subclass · CPC title

• G02F1/0102

  Constructional details, not otherwise provided for in this subclass · CPC title

• G02B5/008

  Surface plasmon devices (diffractive gratings with a pitch less than or comparable to the wavelength G02B5/1809; surface plasmons in integrated optics G02B6/1226; optical analysis of materials by means of surface plasmons G01N21/553) · CPC title

• H01L33/06

  Electricity · mapped topic