Raman detecting chip for thin layer chromatography and method for separating and detecting an analyte

US10012625B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10012625-B2
Application numberUS-201615394045-A
CountryUS
Kind codeB2
Filing dateDec 29, 2016
Priority dateJan 5, 2016
Publication dateJul 3, 2018
Grant dateJul 3, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

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A Raman detecting chip for thin layer chromatography and a method for separating and detecting an analyte are provided. The Raman detecting chip for thin layer chromatography includes a silicon substrate. The silicon substrate includes a flat portion and a plurality of silicon nanowires disposed on the flat portion, wherein each silicon nanowire has a top surface and a sidewall. A metal layer covers the top surface and at least a part of the sidewall. The silicon nanowire has a length from 5 μm to 15 μm.

First claim

Opening claim text (preview).

What is claimed is: 1. A Raman detecting chip for thin layer chromatography, comprising: a silicon substrate comprising a flat portion; a plurality of silicon nanowires disposed on the flat portion, wherein each silicon nanowire has a top surface and a sidewall; and a metal layer covering the top surface and at least a part of the sidewall of the silicon nanowire, wherein the silicon nanowire has a length L from 5 μm to 15 μm, wherein the metal layer disposed on the top surface of the silicon nanowire extends to the side wall of the silicon nanowire, such that the metal layer covers a part of the side wall of the silicon nanowire, and the ratio between the length L 1 of the side wall covered by the metal layer and the length L of the silicon nanowire is from 0.2 to 0.8. 2. The Raman detecting chip for thin layer chromatography as claimed in claim 1 , wherein the metal layer consists of a plurality of metal particles. 3. The Raman detecting chip for thin layer chromatography as claimed in claim 1 , wherein a material of the metal particles is silver, gold, aluminum, copper, tin, titanium, barium, platinum, cobalt, or a combination thereof. 4. The Raman detecting chip for thin layer chromatography as claimed in claim 1 , wherein the top surface of the silicon nanowire has a diameter from 50 nm to 200 nm. 5. The Raman detecting chip for thin layer chromatography as claimed in claim 1 , wherein distance between two adjacent silicon nanowires is from 50 nm to 200 nm. 6. The Raman detecting chip for thin layer chromatography as claimed in claim 1 , wherein the metal layer has a thickness from 20 nm to 100 nm. 7. The Raman detecting chip for thin layer chromatography as claimed in claim 1 , wherein the ratio between the length L 1 of the side wall covered by the metal layer and the length L of the silicon nanowire is from 0.3 to 0.74. 8. The Raman detecting chip for thin layer chromatography as claimed in claim 1 , further comprising: a modification layer disposed on the side wall of the silicon nanowire which is not covered by the metal layer. 9. The Raman detecting chip for thin layer chromatography as claimed in claim 8 , wherein the modification layer is a silicon oxide, silicon nitride, aluminum oxide, or a functional modification material which adjusts polarity of the silicon nanowire. 10. The Raman detecting chip for thin layer chromatography as claimed in claim 1 , wherein the side wall of the silicon nanowire is a slanted sidewall. 11. A method for separating and detecting an analyte, comprising: providing the Raman detecting chip for thin layer chromatography as claimed in claim 1 ; providing a sample, wherein the sample comprises a solvent and at least one compound; spotting the sample on the Raman detecting chip for thin layer chromatography as claimed in claim 1 ; separating the sample by a thin layer chromatography process to obtain at least one analysis spot; and analyzing the analysis spot via surface enhanced Raman scattering spectroscopy.

Assignees

Inventors

Classifications

  • G01N30/92Primary

    Construction of the plate · CPC title

  • G01N21/658Primary

    enhancement Raman, e.g. surface plasmons · CPC title

  • Raman scattering · CPC title

  • Plate chromatography, e.g. thin layer or paper chromatography · CPC title

  • Investigating a scatter or diffraction pattern · CPC title

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What does patent US10012625B2 cover?
A Raman detecting chip for thin layer chromatography and a method for separating and detecting an analyte are provided. The Raman detecting chip for thin layer chromatography includes a silicon substrate. The silicon substrate includes a flat portion and a plurality of silicon nanowires disposed on the flat portion, wherein each silicon nanowire has a top surface and a sidewall. A metal layer c…
Who is the assignee on this patent?
Ind Tech Res Inst, Univ Nat Tsing Hua
What technology area does this patent fall under?
Primary CPC classification G01N30/92. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jul 03 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).