Insect trap using UV LED lamp

Patent metadata

Field	Value
Publication number	US-10010065-B2
Application number	US-201715788183-A
Country	US
Kind code	B2
Filing date	Oct 19, 2017
Priority date	Jul 24, 2014
Publication date	Jul 3, 2018
Grant date	Jul 3, 2018

Abstract

The present document relates to an insect trap using an ultraviolet light-emitting diode (UV LED) lamp, and more particularly, to an insect trap using, in place of a conventional UV light source lamp, a UV LED lamp that significantly increases the insect trapping efficiency. One example implementation of the insect trap includes: a UV LED lamp disposed in an air inlet portion of the duct, and including a printed circuit board (PCB) that has a UV LED chip mounted thereon; an installing portion for installing the UV LED lamp on; and a trapping portion provided near the installing portion.

First claim

What is claimed is:

1. An insect trap comprising:
a UV LED lamp including a printed circuit board (PCB) having a UV LED chip disposed on the PCB;
a housing structured to install the UV LED lamp; and
a trapping portion provided near the housing,
wherein the UV LED chip comprises:
an n-type contact layer including an AlGaN layer or an AlInGaN layer;
a p-type contact layer including an AlGaN layer or an AlInGaN layer; and
an active region located between the n-type contact layer and the p-type contact layer and including barrier layers and a well layer located between the barrier layers, and

wherein the barrier layers include AlInGaN or AlGaN, and the well layer emits UV light.

2. The insect trap of claim 1 , wherein the UV LED chip further includes at least one electron control layer located between the n-type contact layer and the active layer.

3. The insect trap of claim 2 , wherein the at least one electron control layer includes AlInGaN or AlGaN, and has an Al content higher than the n-type contact layer to interfere with a flow of electrons moving from the n-type contact layer into the active region.

4. The insect trap of claim 1 , wherein the UV LED chip further comprises:
a superlattice layer located between the n-type contact layer and the active region; and
an electron injection layer located between the superlattice layer and the active region, and
wherein the electron injection layer has an n-type impurity doping concentration higher than that of the superlattice layer.

5. The insect trap of claim 4 , wherein the UV LED chip further comprises:
an electrostatic discharge preventing layer located between the n-type contact layer and the superlattice layer; and
an electron control layer disposed between the electrostatic discharge preventing layer and the superlattice layer.

6. The insect trap of claim 5 , wherein the electrostatic discharge preventing layer comprises:
an undoped AlGaN layer;
a low-concentration AlGaN layer doped with an n-type impurity at a concentration lower than that of the n-type contact layer; and
and a high-concentration AlGaN layer doped with an n-type impurity at a concentration higher than that of the low-concentration AlGaN layer,
wherein the low-concentration AlGaN layer is located between the undoped AlGaN layer and the high-concentration AlGaN layer.

7. The insect trap of claim 5 , further comprising a first electron control layer disposed between the electrostatic discharge preventing layer and the superlattice layer and located to contact with the high concentration AlGaN layer.

8. The insect trap of claim 1 , wherein the UV LED lamp has a flat plate shape.

9. The insect trap of claim 1 , wherein the UV LED lamp includes an additional UV LED chip and the UV LED chip and the additional UV LED chip are spaced apart from each other.

10. The insect trap of claim 1 , further includes a suction fan disposed between the housing and the trapping portion to create an airflow to facilitate UV illumination from the UV LED lamp toward the trapping portion.

11. An insect trap comprising:
a UV LED lamp including a printed circuit board (PCB) having a UV LED chip disposed on the PCB;
a housing structured to install the UV LED lamp; and
a trapping portion provided near the housing,
wherein the UV LED chip comprises:
an n-type contact layer including an AlGaN layer or an AlInGaN layer;
a p-type contact layer including an AlGaN layer or an AlInGaN layer;
an electron blocking layer located between the n-type contact layer and the p-type contact layer; and
an active region located between the n-type contact layer and the p-type contact layer; and including barrier layers and a well layer located between the barrier layers, and

wherein the barrier layers include AlInGaN or AlGaN, and the well layer emits UV light.

12. The insect trap of claim 11 , wherein the electron blocking layer includes AlGaN or AlInGaN and be doped with a p-type impurity.

13. The insect trap of claim 12 , wherein the p-type impurity includes Mg.

14. The insect trap of claim 11 , wherein the well layer includes InGaN.

15. The insect trap of claim 11 , wherein the UV light has a peak wavelength between 360 nm and 370 nm.

16. The insect trap of claim 11 , wherein a diffusion angle of UV light emitted from the UV LED chip is 120° or less.

Assignees

• Seoul Viosys Co Ltd

Inventors

• Koo Jong Hyun
• Song Hyun Su
• Lee Dong-Kyu

Classifications

• A01M1/106

  for flying insects · CPC title

• A01M1/08 Primary

  {Attracting and catching insects by} using combined illumination {or colours} and suction effects · CPC title

• H01L33/26

  Electricity · mapped topic

• H01L33/06

  Electricity · mapped topic

• H01L33/32

  Electricity · mapped topic