Semiconductor apparatus

Patent metadata

Field	Value
Publication number	US-10008835-B2
Application number	US-201615364259-A
Country	US
Kind code	B2
Filing date	Nov 30, 2016
Priority date	Jan 12, 2016
Publication date	Jun 26, 2018
Grant date	Jun 26, 2018

Abstract

A semiconductor apparatus including a power semiconductor element connected between a first terminal on a high potential side and a second terminal on a low potential side, and controlled to be ON or OFF according to a gate potential thereof; a switch element connected between a control terminal that inputs a control signal for controlling the power semiconductor element and a gate of the power semiconductor element, and controlled to be ON or OFF according to a gate potential thereof; an ON potential supplying section connected between the first terminal and a gate of the switch element, that supplies an ON potential to the gate of the switch element; and an OFF potential supplying section connected between a reference potential and the gate of the switch element, that sets the gate potential of the switch element to an OFF potential in response to a predetermined cutoff condition being satisfied.

First claim

What is claimed is:

1. A semiconductor apparatus comprising:
a power semiconductor element that is connected between a first terminal on a high potential side and a second terminal on a low potential side, and is controlled to be ON or OFF according to a gate potential thereof;
a switch element that is connected between a control terminal that inputs a control signal for controlling the power semiconductor element and a gate of the power semiconductor element, and is controlled to be ON or OFF according to a gate potential thereof;
an ON potential supplying section that is connected between the first terminal and a gate of the switch element, and supplies an ON potential to the gate of the switch element;
an OFF potential supplying section that is connected between a reference potential and the gate of the switch element, and sets the gate potential of the switch element to an OFF potential in response to a predetermined cutoff condition being satisfied;
wherein the ON potential supplying section includes:
a pullup circuit that includes a rectifying element connected between the first terminal and the gate of the switch element, and pulls up the gate of the switch element with a voltage from the first terminal; and
a capacitor that is provided between the gate of the switch element and a reference potential or the control terminal.

2. The semiconductor apparatus according to claim 1 , wherein
the ON potential supplying section pulls up the gate of the switch element, and
the OFF potential supplying section connects the gate of the switch element to the reference potential, in response to the predetermined cutoff condition being satisfied.

3. The semiconductor apparatus according to claim 1 , wherein
the pullup circuit includes a resistor connected in series with the rectifying element, closer to the first terminal than the rectifying element, between the first terminal and the gate of the switch element.

4. The semiconductor apparatus according to claim 1 , comprising:
a discharge circuit that is connected between the gate of the power semiconductor element and the reference potential, and discharges a charge that has been accumulated in the gate of the power semiconductor element.

5. The semiconductor apparatus according to claim 1 , wherein
the power semiconductor element includes a collector terminal on the first terminal side provided on a first surface side of a substrate, a gate terminal provided on a second surface side of the substrate, and an emitter terminal on the second terminal side provided on the second surface side of the substrate,
the second surface side of the substrate has n-type conductivity, and
the switch element is an n-channel MOSFET formed on the second surface side of the substrate.

6. The semiconductor apparatus according to claim 1 , wherein
the semiconductor apparatus is an ignitor that controls a current flowing through an ignition coil according to a control signal from outside.

7. A semiconductor apparatus comprising:
a power semiconductor element that is connected between a first terminal on a high potential side and a second terminal on a low potential side, and is controlled to be ON or OFF according to a gate potential thereof;
a switch element that is connected between a control terminal that inputs a control signal for controlling the power semiconductor element and a gate of the power semiconductor element, and is controlled to be ON or OFF according to a gate potential thereof;
an ON potential supplying section that is connected between the first terminal and a gate of the switch element, and supplies an ON potential to the gate of the switch element;
an OFF potential supplying section that is connected between a reference potential and the gate of the switch element, and sets the gate potential of the switch element to an OFF potential in response to a predetermined cutoff condition being satisfied;
a cutoff condition detecting section that detects whether the predetermined cutoff condition has been satisfied; and
a latch section that latches affirmative detection of the cutoff condition, wherein
the OFF potential supplying section sets the gate potential of the switch element to the OFF potential, in response to the latch section having latched the cutoff condition as being satisfied.

8. The semiconductor apparatus according to claim 7 , wherein
the latch section receives a power source supply from the first terminal and holds a latched value.

9. The semiconductor apparatus according to claim 8 , wherein
the latch section receives the power source supply from the control terminal and the first terminal, and holds the latched value.

10. A semiconductor apparatus comprising:
a power semiconductor element that is connected between a first terminal on a high potential side and a second terminal on a low potential side, and is controlled to be ON or OFF according to a gate potential thereof;
a cutoff condition detecting section that detects whether a predetermined cutoff condition has been satisfied;
a latch section that latches affirmative detection of the cutoff condition; and
a cutoff section for setting the gate potential of the power semiconductor element to an OFF potential, in response to the latch section having latched the affirmative detection of the cutoff condition, wherein
the latch section receives a power source supply from the first terminal and holds a latched value.

11. The semiconductor apparatus according to claim 10 , wherein
the latch section receives the power source supply from the first terminal and a control terminal that inputs a control signal for controlling the power semiconductor element.

12. The semiconductor apparatus according to claim 11 , wherein
the latch section receives the power source supply from the control terminal via a first rectifying element, and receives the power source supply from the first terminal via a second rectifying element.

13. The semiconductor apparatus according to claim 10 , further comprising:
a switch element that is connected between a control terminal that inputs a control signal for controlling the power semiconductor element and a gate of the power semiconductor element, and is controlled to be ON or OFF according to a gate potential thereof; and
an ON potential supplying section that is connected between the first terminal and the gate of the switch element, and supplies an ON potential to the gate of the switch element, wherein
the cutoff section includes an OFF potential supplying section that is connected between a reference potential and the gate of the switch element, and sets the gate potential of the switch element to the OFF potential in response to a predetermined cutoff condition being satisfied.

14. The semiconductor apparatus according to claim 10 , wherein
the power semiconductor element includes a collector terminal on the first terminal side provided on a first surface side of a substrate, a gate terminal provided on a second surface side of the substrate, and an emitter terminal on the second terminal side provided on the second surface side of the substrate,
the semiconductor apparatus includes a semiconductor element having a collector terminal shared with the collector terminal of the power semiconductor element and provided on the first surface side of the substrate and an emitter terminal and a gate terminal that are electrically connected to each other and provided on the second surface side of the substrate, and
the latch section receives the power source supply via the semiconductor element from the first terminal.

Assignees

• Fuji Electric Co Ltd

Inventors

• Miyazawa Shigemi

Classifications

• F02P3/0552 Primary

  Opening or closing the primary coil circuit with semiconductor devices · CPC title

• H01T15/00 Primary

  Circuits specially adapted for spark gaps, e.g. ignition circuits (ignition circuits for internal-combustion engines F02P; electric spark ignition for combustion apparatus F23Q; protection circuits using spark gaps H02H9/06) · CPC title

• H01L27/0635

  Electricity · mapped topic

• H01L29/7395

  Electricity · mapped topic

• H10D84/811

  Combinations of field-effect devices and one or more diodes, capacitors or resistors · CPC title