Quantum dot optical devices with enhanced gain and sensitivity and methods of making same

US10008543B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10008543-B2
Application numberUS-201715723190-A
CountryUS
Kind codeB2
Filing dateOct 3, 2017
Priority dateJan 7, 2005
Publication dateJun 26, 2018
Grant dateJun 26, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

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Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

First claim

Opening claim text (preview).

What is claimed is: 1. Imaging apparatus, comprising: a readout circuit patterned on a substrate and configured to measure and relay electronic signals on a pixel-by-pixel basis; and at least one optically-sensitive layer formed over the readout circuit and configured to generate the electronic signals in response to one or more wavelengths of light absorbed in the at least one optically-sensitive layer. 2. The apparatus according to claim 1 , and comprising an array of conductive regions defining pixels, wherein the readout circuit is configured to activate the pixels so as to cause currents to flow through the at least one optically-sensitive layer and the pixels. 3. The apparatus according to claim 2 , wherein the optically-sensitive layer comprises islands of optically-sensitive material, which respectively overlie the conductive regions. 4. The apparatus according to claim 2 , and comprising an electrode, which is at least partially transparent at the one or more wavelengths, overlying and in electrical communication with the at least one optically-sensitive layer. 5. The apparatus according to claim 1 , wherein the at least one optically-sensitive layer comprises a film of quantum dots. 6. The apparatus according to claim 1 , wherein the at least one optically-sensitive layer comprises an inorganic film. 7. The apparatus according to claim 1 , wherein the at least one optically-sensitive layer comprises an optically-active polymer.

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What does patent US10008543B2 cover?
Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under anoth…
Who is the assignee on this patent?
Invisage Technologies Inc
What technology area does this patent fall under?
Primary CPC classification H01L27/305. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 26 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).