Semiconductor device and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-10008435-B2
Application number	US-201715480700-A
Country	US
Kind code	B2
Filing date	Apr 6, 2017
Priority date	Jun 14, 2016
Publication date	Jun 26, 2018
Grant date	Jun 26, 2018

Abstract

A semiconductor device including a semiconductor chip and a heat dissipation unit (heat sink) is configured as follows. The heat dissipation unit (heat sink) includes a resin tape, and a fin constituted of a graphite sheet and protruding from the resin tape. The fin, including graphene, is disposed on the semiconductor chip such that the graphene is disposed in a direction crossing a surface of the semiconductor chip. The heat dissipation unit is a rolled body in which the graphite sheet and the resin tape are layered and rolled. Thus, by use of the graphene as a constituent material of the fin, thermal conductivity is improved, whereby a heat dissipation characteristic is improved. Furthermore, since the fin is protruded from the resin tape, an exposed area of the fin is increased, and accordingly, the heat dissipation characteristic can be improved.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor chip; and
a heat dissipation unit on the semiconductor chip,
wherein the heat dissipation unit has a resin and a fin protruding from the resin,
the fin comprises graphene, and
the fin contacts a surface of the semiconductor chip such that the graphene is disposed in a direction crossing the surface of the semiconductor chip.

2. The semiconductor device according to claim 1 ,
wherein the heat dissipation unit comprises a rolled body in which a graphite sheet and a resin tape are layered and rolled.

3. The semiconductor device according to claim 1 , wherein the fin comprises a graphite sheet including a plurality of layered graphene sheets.

4. The semiconductor device according to claim 3 , wherein a graphene sheet of the plurality of layered graphene sheets comprises sp2-bonded carbon atoms having a thickness of a single atom.

5. The semiconductor device according to claim 3 , wherein the plurality of layered graphene sheets are layered in a thickness direction of the graphite sheet, and the thickness direction of the graphite sheet is formed parallel to the surface of the semiconductor chip.

6. The semiconductor device according to claim 5 , wherein the graphite sheet projects from the surface of the semiconductor chip in a width direction of the graphite sheet which is perpendicular to the thickness direction of the graphite sheet.

7. The semiconductor device according to claim 1 , wherein the fin comprises a graphite sheet and the resin comprises a resin tape, and the fin projects from the resin tape.

8. The semiconductor device according to claim 7 , wherein the resin tape is thermocompression bonded to the surface of the semiconductor chip.

9. The semiconductor device according to claim 7 , wherein the resin tape fixes the graphite sheet to the surface of the semiconductor chip.

10. The semiconductor device according to claim 7 , wherein a thickness of the resin tape comprises a pitch between portions of the graphite sheet.

11. The semiconductor device according to claim 1 , wherein a plurality of bumps are formed on a lower surface of the semiconductor chip, and the heat dissipation unit is formed on the surface of the semiconductor chip which is opposite the lower surface, such that the fin contacts the surface and projects perpendicularly from the surface.

12. The semiconductor device according to claim 1 , wherein the fin and the resin are layered in a first direction, and the fin and the resin contact the surface of the semiconductor chip in a second direction opposite the first direction.

13. A semiconductor device comprising:
a semiconductor chip;
a sealing resin on the semiconductor chip; and
a heat dissipation unit embedded in the sealing resin,
wherein the heat dissipation unit has a resin and a fin protruding from the resin,
the fin comprises graphene, and
the fin contacts a surface of the semiconductor chip such that the graphene is disposed in a direction crossing the surface of the semiconductor chip.

14. The semiconductor device according to claim 13 ,
wherein the heat dissipation unit comprises is a rolled body in which the graphite sheet and the resin tape are layered and rolled.

15. A method of manufacturing a semiconductor device, the method comprising:
preparing a heat dissipation unit; and
mounting the heat dissipation unit on a semiconductor chip,
wherein the heat dissipation unit has a resin and a fin protruding from the resin,
the fin comprises graphene, and
in the mounting of the heat dissipation unit, the heat dissipation unit is mounted on the semiconductor chip such that the fin contacts a surface of the semiconductor chip and the graphene is disposed in a direction crossing the surface of the semiconductor chip.

16. The method of manufacturing a semiconductor device according to claim 15 , further comprising:
forming the heat dissipation unit comprising:
rolling a graphite sheet having a first width and a resin tape having a second width smaller than the first width in a layered state.

17. The method of manufacturing a semiconductor device according to claim 15 , further comprising:
forming the heat dissipation unit comprising:
forming a rolled body by rolling a graphite sheet and a resin tape in a layered state; and
forming the fin constituted of the graphite sheet and protruding from the resin tape by etching the resin tape exposed from one side of the rolled body.

18. A method of manufacturing a semiconductor device, the method comprising:
preparing a rolled body in which a graphite sheet and a resin tape are layered and rolled;
mounting the rolled body on a semiconductor chip;
covering each periphery of the rolled body and the semiconductor chip with a sealing resin;
removing the sealing resin on the rolled body until a surface of the rolled body is exposed; and
forming a fin constituted of the graphite sheet and protruding from the resin tape by etching the resin tape exposed from the surface of the rolled body,
wherein, in the mounting of the rolled body, the rolled body is mounted on the semiconductor chip such that graphene constituting the graphite sheet is disposed in a direction crossing a surface of the semiconductor chip.

Assignees

• Renesas Electronics Corp

Inventors

• Matsubara Yoshihisa

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/725

  between a chip and a laterally-adjacent insulating package substrate, interposer or RDL · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title

• H10W72/07338

  hardening the adhesive by curing, e.g. thermosetting · CPC title