Doping control of metal nitride films

Patent metadata

Field	Value
Publication number	US-10008412-B2
Application number	US-201715601525-A
Country	US
Kind code	B2
Filing date	May 22, 2017
Priority date	Feb 1, 2013
Publication date	Jun 26, 2018
Grant date	Jun 26, 2018

Abstract

Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.

First claim

What is claimed is:

1. A method for controlling the doping of a manganese nitride film, the method comprising:
controlling a temperature during deposition of a manganese nitride film to control a density of the deposited manganese nitride film, the density of the manganese nitride film less than or equal to about 13 g/cm 3 and a thickness in the range of about 5 Å to about 15 Å; and
exposing the manganese nitride film to a dopant metal precursor to form a doped manganese nitride film,
wherein there is no plasma treatment during deposition of the manganese nitride film or between deposition of the manganese nitride film and doping of the manganese nitride film.

2. The method of claim 1 , wherein the manganese nitride film further comprises one or more of TaN or TiN.

3. The method of claim 1 , wherein the manganese nitride film is doped with one or more of Ru, Cu, Co, Mo, Al, Mg, Cr, Nb, Ta, Ti and V.

4. The method of claim 1 , wherein the temperature is controlled such that the temperature during deposition of the manganese nitride film does not exceed about 350° C.

5. The method of claim 1 , wherein the temperature is controlled such that the temperature during deposition of the manganese nitride film does not exceed about 250° C.

6. The method of claim 5 , further comprising controlling the temperature during doping such that the temperature does not exceed about 250° C.

7. The method of claim 1 , wherein the manganese nitride film is deposited via atomic layer deposition.

8. The method of claim 1 , further comprising exposing the manganese nitride film to plasma treatment after doping.

9. A method for depositing a barrier film, the method comprising:
depositing a manganese nitride film on a dielectric film on a substrate surface, wherein a temperature during the manganese nitride deposition is controlled to control a density of the manganese nitride film, the manganese nitride film having a thickness in the range of about 5 Å to about 15 Å and the density is less than or equal to about 13 g/cm 3 ;
doping the manganese nitride film with one or more dopants at a temperature that does not exceed about 250° C., the dopants comprising one or more of aluminum or copper; and
diffusing one or more of the dopants through the manganese nitride film to the dielectric film,
wherein there is no plasma treatment during deposition of the manganese nitride film or between deposition of the manganese nitride film and doping of the manganese nitride film.

Assignees

• Applied Materials Inc

Inventors

• Lakshmanan Annamalai
• Sheu Ben-Li
• Wei Guodan
• Lundy Nicole
• Ma Paul F

Classifications

• H10W20/0552

  by diffusing metallic dopants to react with dielectrics · CPC title

• H10P14/432

  using selective deposition · CPC title

• H10W20/0523

  by irradiating with ultraviolet or particle radiation · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/076

  in via holes or trenches · CPC title