Display device and method of manufacturing a display device

Patent metadata

Field	Value
Publication number	US-10005263-B2
Application number	US-201514814059-A
Country	US
Kind code	B2
Filing date	Jul 30, 2015
Priority date	Feb 26, 2015
Publication date	Jun 26, 2018
Grant date	Jun 26, 2018

Abstract

A display device may include a first substrate, a lower barrier layer disposed on a rear surface of the first substrate, an upper barrier layer disposed on a front surface of the first substrate, a display structure disposed on the upper barrier layer, and a second substrate disposed on the display structure.

First claim

What is claimed is:

1. A method of manufacturing a display device, the method comprising:
forming a barrier layer on a support substrate;
forming a first substrate on the barrier layer;
forming an upper barrier layer on a front surface the first substrate;
forming a display structure on the upper barrier layer;
separating the first substrate from the support substrate using a laser irradiation process; and
forming a lower barrier layer on a rear surface of the first substrate.

2. The method of claim 1 , wherein a laser is irradiated into the barrier layer through the support substrate in the laser irradiation process.

3. The method of claim 2 , wherein the lower barrier layer comprises a portion of the barrier layer remaining on the rear surface of the first substrate after the laser irradiation process.

4. The method of claim 2 , wherein a laser ablation depth of the barrier layer by the laser corresponds to an energy density of the laser.

5. The method of claim 2 , wherein the barrier layer comprises a single layer structure.

6. The method of claim 5 , wherein the barrier layer comprises silicon nitride or silicon oxynitride.

7. The method of claim 5 , wherein the upper barrier layer comprises a multi layer structure.

8. The method of claim 7 , wherein forming the upper barrier layer comprises alternately stacking silicon oxide films and silicon nitride films on the front surface of the first substrate.

9. The method of claim 4 , wherein a thickness of the lower barrier layer is a difference between an entire thickness of the barrier layer and the laser ablation depth of the barrier layer.

10. The method of claim 9 , wherein the thickness of the lower barrier layer is adjusted in accordance with the energy density of the laser.

11. The method of claim 10 , wherein the energy density of the laser is adjusted in accordance with a hydrogen content of the barrier layer.

12. The method of claim 11 , wherein the hydrogen content of the barrier layer is adjusted in accordance with relative flow rates of a silane (SiH 4 ) gas, an ammonia (NH 3 ) gas, and an oxygen (O 2 ) gas.

Assignees

• Samsung Display Co Ltd

Inventors

• Jung Seung-Ho
• Choi Chaun-Gi
• Park Hye-Young
• Yoon Young-Sik
• Jeon Joo-Hee

Classifications

• B32B2310/0843

  using laser · CPC title

• H01L51/5237

  Electricity · mapped topic

• H01L27/3244

  Electricity · mapped topic

• B32B2255/20

  Inorganic coating · CPC title

• B32B27/16

  specially treated, e.g. irradiated · CPC title