Terminator and termination method

US10003115B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10003115-B2
Application numberUS-201615374143-A
CountryUS
Kind codeB2
Filing dateDec 9, 2016
Priority dateDec 17, 2015
Publication dateJun 19, 2018
Grant dateJun 19, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A terminator has an upper dielectric layer provided on an upper broad wall of a post-wall waveguide, and a microstrip line (MSL) provided on the upper dielectric layer. A blind via has one end thereof connected with one end of the MSL and is inserted inside the post-wall waveguide. A chip resistor has one end thereof connected with the other end of the MSL and has the other end thereof connected with the upper broad wall.

First claim

Opening claim text (preview).

The invention claimed is: 1. A terminator comprising: a post wall constituted by a plurality of conductor posts; and a pair of broad walls which, together with the post wall, form a waveguide region, one of the pair of broad walls being provided with a microstrip line on a surface thereof via a dielectric layer; a blind via connected with one end of the microstrip line and inserted inside the waveguide region; and a resistor having one end thereof connected with the other end of the microstrip line and having the other end thereof connected with the one of the pair of broad walls. 2. The terminator as set forth in claim 1 , wherein, when viewed from above, the resistor is contained within a region surrounded by the post wall. 3. The terminator as set forth in claim 1 , wherein, when viewed from above, the resistor extends across the post wall from the region surrounded by the post wall to an outside of the region. 4. The terminator as set forth in claim 1 , further comprising an attenuation layer provided between the resistor and the one of the pair of broad walls, the attenuation layer being made of a material containing a dielectric. 5. The terminator as set forth in claim 4 , wherein the attenuation layer is an anisotropic conductive film made of (i) a resin which is the dielectric and (ii) conductive particles dispersed in the resin. 6. The terminator as set forth in claim 1 , wherein the microstrip line is provided with an impedance matching section. 7. The terminator as set forth in claim 6 , wherein: the impedance matching section has a coil section and a capacitance section connected with an end of the coil section, the capacitance section being constituted by an open stub; and a connection section of the capacitance section where the capacitance section is connected with the coil section is a connection section of the impedance matching section where the impedance matching section is connected with the microstrip line. 8. The terminator as set forth in claim 7 , wherein the capacitance section is connected only with one end of the coil section in the impedance matching section. 9. The terminator as set forth in claim 7 , wherein the capacitance section is connected with each of both ends of the coil section in the impedance matching section. 10. The terminator as set forth in claim 7 , wherein sets each consisting of the coil section and the capacitance section are provided in multiple stages and connected with each other in the impedance matching section. 11. The terminator as set forth in claim 7 , wherein: the coil section of the impedance matching section has, between one end and the other end of the coil section, a meandering shape which meanders toward one side and the other side of a direction perpendicular to a straight line that connects between the one end and the other end; and the capacitance section has a linear section extending from an end of the coil section in the direction perpendicular to the straight line. 12. The terminator as set forth in claim 11 , wherein the capacitance section has a bent section which bends from a termination section of the linear section so as to extend along a meandering-shaped region of the coil section. 13. A termination method comprising the steps of: providing a microstrip line, via a dielectric layer, on a surface of one of a pair of broad walls of a post-wall waveguide, the post-wall waveguide including: a post wall constituted by a plurality of conductor posts; and the pair of broad walls which, together with the post wall, form a waveguide region; providing a blind via which is connected with one end of the microstrip line and inserted inside the waveguide region; and providing a resistor which has one end thereof connected with the other end of the microstrip line and has the other end thereof connected with the one of the pair of broad walls.

Assignees

Inventors

Classifications

  • comprising distributed impedance elements together with lumped impedance elements · CPC title

  • Hollow-waveguide/strip-line transitions · CPC title

  • H01P1/268Primary

    Strip line terminations (H01P1/262 takes precedence) · CPC title

  • Manufacturing waveguides or transmission lines of the waveguide type · CPC title

  • Frequency- independent attenuators · CPC title

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What does patent US10003115B2 cover?
A terminator has an upper dielectric layer provided on an upper broad wall of a post-wall waveguide, and a microstrip line (MSL) provided on the upper dielectric layer. A blind via has one end thereof connected with one end of the MSL and is inserted inside the post-wall waveguide. A chip resistor has one end thereof connected with the other end of the MSL and has the other end thereof connecte…
Who is the assignee on this patent?
Fujikura Ltd
What technology area does this patent fall under?
Primary CPC classification H01P1/268. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 19 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).