Light-emitting device and electronic device

Patent metadata

Field	Value
Publication number	US-10003047-B2
Application number	US-201715484451-A
Country	US
Kind code	B2
Filing date	Apr 11, 2017
Priority date	May 9, 2012
Publication date	Jun 19, 2018
Grant date	Jun 19, 2018

Abstract

A highly reliable light-emitting device is provided. Damage to an element due to externally applied physical power is suppressed. Alternatively, in a process of pressure-bonding of an FPC, damage to a resin and a wiring which are in contact with a flexible substrate due to heat is suppressed. A neutral plane at which stress-strain is not generated when a flexible light-emitting device including an organic EL element is deformed, is positioned in the vicinity of a transistor and the organic EL element. Alternatively, the hardness of the outermost surface of a light-emitting device is high. Alternatively, a substrate having a coefficient of thermal expansion of 10 ppm/K or lower is used as a substrate that overlaps with a terminal portion connected to an FPC.

First claim

What is claimed is:

1. A light-emitting device comprising:
a first flexible substrate comprising a first surface and a second surface opposite to the first surface;
a transistor over the first surface;
an insulating layer over the transistor;
a light-emitting element over and in contact with an upper surface of the insulating layer, wherein the light-emitting element is electrically connected to the transistor; and
a second flexible substrate over the light-emitting element, the second flexible substrate comprising a third surface and a fourth surface opposite to the third surface,
wherein the first surface and the third surface face each other, and
wherein a first distance from the second surface to the upper surface of the insulating layer is 0.8 to 1.2 times as large as a second distance from the fourth surface to the upper surface of the insulating layer.

2. The light-emitting device according to claim 1 ,
wherein the first distance is 0.9 to 1.1 times as large as the second distance.

3. The light-emitting device according to claim 1 ,
wherein the insulating layer is a planarization layer.

4. The light-emitting device according to claim 3 ,
wherein a portion of one of the transistor, the planarization layer, and the light-emitting element is positioned in a neutral plane.

5. The light-emitting device according to claim 1 , further comprising a color filter between the light-emitting element and the second flexible substrate.

6. The light-emitting device according to claim 1 , further comprising a color filter between the light-emitting element and the first flexible substrate.

7. The light-emitting device according to claim 1 ,
wherein the light-emitting element comprises a layer containing a light-emitting organic compound between a first electrode and a second electrode over the first electrode, and
wherein the first electrode is provided over and in contact with the insulating layer.

8. The light-emitting device according to claim 1 ,
wherein the transistor comprises an oxide semiconductor layer.

9. The light-emitting device according to claim 1 , further comprising an FPC affixed to the first flexible substrate.

10. An electronic device comprising the light-emitting device according to claim 9 .

11. A light-emitting device comprising:
a first flexible substrate comprising a first surface and a second surface opposite to the first surface;
a driver circuit over the first flexible substrate;
a pixel portion over the first surface, the pixel portion comprising:
a transistor over the first surface;
an insulating layer over the transistor;
a light-emitting element over the transistor and in contact with an upper surface of the insulating layer, wherein the light-emitting element is electrically connected to the transistor; and

a second flexible substrate comprising a third surface and a fourth surface opposite to the third surface,
wherein the first surface and the third surface face each other with the pixel portion provided therebetween, and
wherein a first distance from the second surface to the upper surface of the insulating layer is 0.8 to 1.2 times as large as a second distance from the fourth surface to the upper surface of the insulating layer.

12. The light-emitting device according to claim 11 ,
wherein the first distance is 0.9 to 1.1 times as large as the second distance.

13. The light-emitting device according to claim 11 ,
wherein the insulating layer is a planarization layer.

14. The light-emitting device according to claim 13 ,
wherein a portion of one of the transistor, the planarization layer, and the light-emitting element is positioned in a neutral plane.

15. The light-emitting device according to claim 11 , further comprising a color filter between the light-emitting element and the second flexible substrate.

16. The light-emitting device according to claim 11 , further comprising a color filter between the light-emitting element and the first flexible substrate.

17. The light-emitting device according to claim 11 ,
wherein the light-emitting element comprises a layer containing a light-emitting organic compound between a first electrode and a second electrode over the first electrode, and over and in contact with the insulating layer.

18. The light-emitting device according to claim 11 ,
wherein the transistor comprises an oxide semiconductor layer.

19. The light-emitting device according to claim 11 , further comprising an FPC affixed to the first flexible substrate.

20. An electronic device comprising the light-emitting device according to claim 19 .

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Eguchi Shingo

Classifications

• H10K71/00

  Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title

• H10K50/30

  Organic light-emitting transistors · CPC title

• H01L27/3258

  Electricity · mapped topic

• H01L2251/5338

  Electricity · mapped topic

• H01L27/322

  Electricity · mapped topic