Semiconductor light emitting element and method for manufacturing the same
US-2016163937-A1 · Jun 9, 2016 · US
Method for producing a semiconductor light-emitting device
US10002989B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10002989-B2 |
| Application number | US-201715464134-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 20, 2017 |
| Priority date | May 30, 2016 |
| Publication date | Jun 19, 2018 |
| Grant date | Jun 19, 2018 |
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Abstract
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The present invention provides a method for producing a semiconductor light-emitting device in which fine protrusions and recesses are formed on a bottom surface between the protrusions on a surface of a substrate. The method comprises forming a first resist pattern on a nitrogen surface of the substrate, forming a plurality of first protrusions on the nitrogen surface of the substrate, and forming a plurality of second protrusions on the nitrogen surface of the transparent nitride-based substrate. In forming the first protrusions, the plurality of first protrusions and a bottom surface between the first protrusions are formed by dry etching. In forming the second protrusions, the plurality of second protrusions having a height lower than the height of the first protrusions are formed on the bottom surface by wet etching without removing the first resist pattern subjected to dry etching.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for producing a flip-chip type semiconductor light-emitting device in which an n-electrode and a p-electrode are formed on a same side thereof, the method comprising: polishing a nitrogen surface of a substrate which is made of a transparent nitride-based semiconductor, the nitrogen surface being a light extraction surface; removing an affected layer formed on the nitrogen surface of the substrate in the polishing of the nitrogen surface by a dry etching to expose a clean nitrogen surface of the substrate; forming a first resist pattern on the clean nitrogen surface of the substrate; forming a plurality of first protrusions and a recess having a continuous flat bottom surface on the clean nitrogen surface of the substrate; and forming a plurality of second protrusions on the continuous flat bottom surface which is the clean nitrogen surface of the substrate; wherein in forming the plurality of first protrusions, the plurality of first protrusions and the continuous flat bottom surface between the plurality of first protrusions are formed by an other dry etching; in forming the plurality of second protrusions, the plurality of second protrusions having a height smaller than a height of the plurality of first protrusions are formed on the continuous flat bottom surface by wet etching without removing the first resist pattern subjected to the other dry etching. 2. The method for producing the flip-chip type semiconductor light-emitting device according to claim 1 , wherein in forming the plurality of first protrusions and the recess, the plurality of first protrusions are formed at a constant pitch interval and in forming the plurality of second protrusions, the plurality of second protrusions are randomly formed. 3. The method for producing the flip-chip type semiconductor light-emitting device according to claim 1 , wherein in forming the plurality of first protrusions and the recess, and forming the plurality of second protrusions, the plurality of first protrusions are formed at a pitch of 350 nm to 550 nm, the height of the plurality of first protrusions is 200 nm to 400 nm, a diameter of the plurality of first protrusions at a bottom surface thereof is 150 nm to 350 nm; and the height of the plurality of second protrusions is 100 nm to 300 nm, and a diameter of the plurality of second protrusions at a bottom surface thereof is 100 nm to 300 nm. 4. The method for producing the flip-chip type semiconductor light-emitting device according to claim 1 , wherein an area of the plurality of first protrusions accounts for 50% to 85% of a total area of the nitrogen surface of the substrate. 5. The method for producing the flip-chip type semiconductor light-emitting device according to claim 1 , further comprising: forming a semiconductor layer on a surface opposite to the nitrogen surface of the substrate. 6. The method for producing the flip-chip type semiconductor light-emitting device according to claim 1 , wherein where the substrate is GaN.
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Classifications
Electricity · mapped topic
Electricity · mapped topic
- H01L33/22Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US10002989B2 cover?
- The present invention provides a method for producing a semiconductor light-emitting device in which fine protrusions and recesses are formed on a bottom surface between the protrusions on a surface of a substrate. The method comprises forming a first resist pattern on a nitrogen surface of the substrate, forming a plurality of first protrusions on the nitrogen surface of the substrate, and for…
- Who is the assignee on this patent?
- Toyoda Gosei Kk, Toyota Gosei Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L33/22. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 19 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).