Metrology targets with filling elements that reduce inaccuracies and maintain contrast

Patent metadata

Field	Value
Publication number	US-10002806-B2
Application number	US-201514605425-A
Country	US
Kind code	B2
Filing date	Jan 26, 2015
Priority date	Feb 12, 2014
Publication date	Jun 19, 2018
Grant date	Jun 19, 2018

Abstract

The subject application relates to metrology targets with filling elements that reduce inaccuracies and maintain contrast. The present invention provides a metrology target and a method to design the metrology target. The metrology target comprises specified filling elements introduced into identified continuous regions in a given target design, wherein parameters of the introduced filling elements are determined by a trade-off between a contrast requirement and an inaccuracy requirement which is associated via production with the identified continuous regions. The method includes the steps of identifying continuous regions in a target design, and introducing specified filling elements into the identified continuous regions, wherein parameters of the introduced filling elements are determined by a trade-off between a contrast requirement and an inaccuracy requirement which is associated via production with the identifying continuous regions. At least one of the identifying and the introducing can be carried out by at least one computer processor.

First claim

What is claimed is:

1. A method of designing metrology targets comprising:
identifying, with one or more processors, one or more continuous regions in a target design;
introducing, with the one or more processors, one or more selected filling elements into the one or more identified continuous regions to form a modified target design, wherein one or more parameters of the one or more introduced filling elements are determined based on a contrast requirement and an inaccuracy requirement of the modified target design, wherein contrast and inaccuracy are dependent on an amount of empty region within the one or more continuous regions; and
producing a target with the modified target design on a wafer.

2. The method of claim 1 , wherein the step of identifying is carried out in at least a background area of a target element.

3. The method of claim 1 , wherein the inaccuracy requirement is a rotation term.

4. The method of claim 1 , wherein the selected one or more filling elements comprise at least one periodic structure.

5. The method of claim 1 , wherein the selected one or more filling elements comprise at least one first periodic structure having a first set of selected parameters, and target elements comprising at least one second periodic structure having a second set of selected parameters, wherein the first set of selected parameters differ from the second set of selected parameters by an extent necessary to satisfy the contrast requirement.

6. The method of claim 5 , wherein at least one of the first set of selected parameters or the second set of selected parameters comprise at least one of a pitch, an orientation, a pattern, a dimension of one or more segments, an aspect ratio or a topography.

7. The method of claim 1 , wherein the step of introducing is carried out according to a selected set of design rules.

8. The method of claim 1 , further comprising producing one or more metrology targets including the one or more filling elements.

9. The method of claim 8 , wherein the one or more filling elements are formed with a cutting mask.

10. A metrology system comprising:
a metrology tool configured to measure overlay from one or more metrology targets, wherein the one or more metrology targets comprise:
one or more selected filling elements positioned within one or more identified continuous regions of the metrology target, wherein one or more parameters of the one or more introduced filling elements are based on a contrast requirement and an inaccuracy requirement of the metrology target, wherein contrast and inaccuracy are dependent on an amount of empty region within the one or more identified continuous regions.

11. A metrology target comprising:
one or more selected filling elements positioned within one or more identified continuous regions of the metrology target, wherein one or more parameters of the one or more introduced filling elements are based on a contrast requirement and an inaccuracy requirement of the metrology target, wherein contrast and inaccuracy are dependent on an amount of empty region within the one or more identified continuous regions.

12. The metrology target of claim 11 , further comprising:
at least one segmented target element,
wherein the segmented target element includes at least one background area,
wherein the one or more selected filling elements are introduced into the one or more identified continuous regions in the at least one background area, and wherein the contrast requirement comprises a contrast requirement of the segmented target element relative to the at least one background area.

13. The metrology target of claim 11 , wherein the selected one or more filling elements comprise at least one first periodic structure having a first set of selected parameters, and one or more target elements comprising at least one second periodic structure having a second set of selected parameters, wherein the first set of selected parameters differ from the second set of selected parameters by an extent necessary to satisfy the contrast requirement.

14. The metrology target of claim 13 , wherein the one or more target elements are segmented and wherein a density of the one or more filling elements in the one or more identified continuous regions is between half and one tenth of a density of the segmentation of the one or more target elements.

15. The metrology target of claim 13 , wherein at least one of the first set of selected parameters or the second set of selected parameters comprise at least one of a pitch, an orientation, a pattern, a dimension of one or more segments, an aspect ratio or a topography.

16. The metrology target of claim 11 , configured to yield a rotation term below a selected threshold.

17. The metrology target of claim 11 , wherein the selected one or more filling elements comprise at least one periodic structure.

18. The metrology target of claim 11 , wherein one or more structures of the metrology target are compatible with a selected set of design rules.

19. The metrology target of claim 11 , wherein the one or more identified continuous regions are at least 300 nm in width.

20. A metrology system comprising:
a metrology tool configured to measure overlay from one or more metrology targets, wherein the one or more metrology targets comprise:
one or more segmented target elements including one or more background regions; and
one or more selected filling elements positioned within one or more identified continuous regions within the one or more background regions, wherein one or more parameters of the one or more introduced filling elements are based on a contrast requirement and an inaccuracy requirement of the metrology target, wherein contrast and inaccuracy are dependent on an amount of empty region within the one or more identified continuous regions.

21. An apparatus comprising:
a memory element configured to store a plurality of computer-readable instructions; and
a processor configured to execute the plurality of computer-readable instructions to:
identify one or more continuous regions in a target design;
introduce one or more selected filling elements into the one or more identified continuous regions to form a modified target design, wherein one or more parameters of the one or more introduced filling elements are determined based on a contrast requirement and an inaccuracy requirement of the modified target design, wherein contrast and inaccuracy are dependent on an amount of empty region within the one or more continuous regions; and
direct a production tool to produce a target with the modified target design on a wafer.

22. The apparatus of claim 21 , wherein the processor is configured to execute the plurality of computer readable instructions to produce the one or more selected filling elements using a cutting mask.

Assignees

• Kla Tencor Corp

Inventors

• Amir Nuriel
• Yohanan Raviv

Classifications

• H10P74/27 Primary

  Structural arrangements therefor · CPC title

• G01N21/4785

  Standardising light scatter apparatus; Standards therefor · CPC title

• H01L22/30 Primary

  Electricity · mapped topic