Manufacture method of black matrix
US-2017097549-A1 · Apr 6, 2017 · US
US10001589B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10001589-B2 |
| Application number | US-201615236558-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 15, 2016 |
| Priority date | Jan 4, 2016 |
| Publication date | Jun 19, 2018 |
| Grant date | Jun 19, 2018 |
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The present disclosure provides a mask assembly, a color filter substrate and a method of manufacturing the same. The mask assembly includes: a first mask formed with a plurality of first black matrix marking mask patterns at a position corresponding to each marking region, a spacing between centers of two first black matrix marking mask patterns that are the closest to each other among the first black matrix marking mask patterns being not less than two times of a spacing between centers of two adjacent sub-pixels located in a same row; and a second mask formed with a plurality of photoresist block mask patterns at a position corresponding to the color filtering region, and further formed with at least two photoresist marking mask patterns, which are located at a position corresponding to each marking region and arranged in a column direction.
Opening claim text (preview).
What is claimed is: 1. A color filter substrate, comprising a color filtering region and a plurality of marking regions, the color filtering region being divided into a plurality of pixel units each comprising a plurality of photoresist blocks of different colors arranged in a row direction, wherein a plurality of photoresist marking blocks are arranged in at least two rows within each of the marking regions, such that the photoresist marking blocks located in different columns have different colors while the photoresist marking blocks located in a same column have a same color, and such that a spacing between centers of two adjacent ones of the photoresist marking blocks located in a same row is equal to a spacing between centers of two adjacent ones of the photoresist blocks located in the same row; and a plurality of first black matrix marking blocks are further provided within each of the marking regions, such that in a same marking region, at least two of the first black matrix marking blocks are covered by the photoresist marking blocks of different colors respectively, and such that a spacing between centers of two of the first black matrix marking blocks that are the closest to each other among the first black matrix marking blocks is not less than two times of a spacing between centers of two adjacent ones of the photoresist blocks located in the same row. 2. The color filter substrate according to claim 1 , wherein the number of the first black matrix marking blocks located within any one of the marking regions is equal to the number of color kinds of the photoresist blocks in the pixel unit, and a plurality of the first black matrix marking blocks located within the same marking region are respectively covered by the photoresist marking blocks of different colors. 3. The color filter substrate according to claim 1 , wherein three photoresist blocks are provided within each pixel unit, a plurality of the photoresist marking blocks arranged in two rows and three columns and three first black matrix marking blocks are provided within each of the marking regions, and the three first black matrix marking blocks are respectively covered by a middle one of the photoresist marking blocks in a first row and two photoresist marking blocks located at the beginning and the end of a second row. 4. The color filter substrate according to claim 1 , wherein at least one spacer marking block and one second black matrix marking block that is arranged in a same layer as the first black matrix marking block are further provided within each of the marking regions, the second black matrix marking block is covered by the spacer marking block, and a spacing between centers of the second black matrix marking block and the first black matrix marking block which is located closest to the second black matrix marking block is not less than two times of a spacing between centers of two adjacent ones of the photoresist blocks in a same row. 5. The color filter substrate according to claim 4 , wherein a cross section of the first black matrix marking block has a rectangular shape with a length and a width each in a range of 45˜50 μm; and a cross section of the second black matrix marking block has a rectangular shape with a length and a width each in a range of 45˜50 μm. 6. The color filter substrate according to claim 1 , wherein a spacing between centers of two adjacent photoresist marking blocks of a same color located within a same marking region is in a range of 300˜320 μm. 7. The color filter substrate according to claim 1 , wherein a cross section of the photoresist marking block has a rectangular shape with a length and a width each in a range of 85˜95 μm. 8. The color filter substrate according to claim 1 , wherein a grid shaped black matrix is further arranged within the color filtering region in a same layer as the first black matrix marking block, each grid corresponding to one of the photoresist blocks.
Alignment or registration features, e.g. alignment marks on the mask substrates · CPC title
Colour filters · CPC title
Microphotolithographic exposure; Apparatus therefor (photo-masks G03F1/00) · CPC title
in the form of arrays · CPC title
Methods for their manufacture, e.g. printing, electro-deposition or photolithography · CPC title
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