Arsenic-doped source/drain with phosphorus-doped contact region for dopant diffusion control
US-2026096162-A1 · Apr 2, 2026 · US
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Wallace Patrick M patents
Wallace Patrick M is listed as an inventor on 4 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Wallace Patrick M |
| Total patents | 4 |
| First publication | May 4, 2023 |
| Latest publication | Apr 2, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Gate structures to enable lower subthreshold slope in gallium nitride-based transistors
US-12439627-B2 · Oct 7, 2025 · US
Gate structures to enable lower subthreshold slope in gallium nitride-based transistors
US-2023197840-A1 · Jun 22, 2023 · US
Pre-flow of p-type dopant precursor to enable thinner p-gan layers in gallium nitride-based transistors
US-2023132548-A1 · May 4, 2023 · US
Recent patents
Latest publications not already listed above.
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Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Intel Corp | 4 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/8503 | 3 |
| H10D30/015 | 3 |
| H10D30/475 | 3 |
| H10D62/343 | 3 |
| H01L29/66462 | 2 |