Oxygen-free atomic layer deposition of indium sulfide
US-9382618-B2 · Jul 5, 2016 · US
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Patent family 55074090
This patent family groups 1 related publication across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 55074090 |
| Family type | — |
| Earliest priority | Jul 18, 2014 |
| First filing country | US |
| Member publications | 1 |
| Countries | US |
| Representative publication | US9382618B2 — Oxygen-free atomic layer deposition of indium sulfide |
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US9382618B2 — Oxygen-free atomic layer deposition of indium sulfide (published Jul 5, 2016)
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