Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion
US-9388499-B2 · Jul 12, 2016 · US
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Patent family 54701077
This patent family groups 2 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 54701077 |
| Family type | — |
| Earliest priority | May 28, 2014 |
| First filing country | US |
| Member publications | 2 |
| Countries | US |
| Representative publication | US9388499B2 — Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion |
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US9388499B2 — Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion (published Jul 12, 2016)
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