Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device
US-9620706-B2 · Apr 11, 2017 · US
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Patent family 54697643
This patent family groups 2 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 54697643 |
| Family type | — |
| Earliest priority | Dec 2, 2014 |
| First filing country | US |
| Member publications | 2 |
| Countries | US |
| Representative publication | US9620706B2 — Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device |
Representative publication
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US9620706B2 — Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device (published Apr 11, 2017)
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