Method for evaluating internal stress of silicon carbide monocrystalline wafer and method for predicting warpage in silicone carbide monocrystalline wafer
US-10031089-B2 · Jul 24, 2018 · US
This patent family groups 2 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 52688558 |
| Family type | — |
| Earliest priority | Sep 20, 2013 |
| First filing country | US |
| Member publications | 2 |
| Countries | US |
| Representative publication | US10031089B2 — Method for evaluating internal stress of silicon carbide monocrystalline wafer and method for predicting warpage in silicone carbide monocrystalline wafer |
Best representative member for this family based on priority and filing country.
US10031089B2 — Method for evaluating internal stress of silicon carbide monocrystalline wafer and method for predicting warpage in silicone carbide monocrystalline wafer (published Jul 24, 2018)
Related publications in this family.
US-10031089-B2 · Jul 24, 2018 · US
US-2016231256-A1 · Aug 11, 2016 · US