Semiconductor device in which an insulated-gate bipolar transistor ( IGBT) region and a diode region are formed on one semiconductor substrate
US-10074719-B2 · Sep 11, 2018 · US
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Patent family 50977832
This patent family groups 2 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 50977832 |
| Family type | — |
| Earliest priority | Dec 20, 2012 |
| First filing country | US |
| Member publications | 2 |
| Countries | US |
| Representative publication | US10074719B2 — Semiconductor device in which an insulated-gate bipolar transistor ( IGBT) region and a diode region are formed on one semiconductor substrate |
Representative publication
Best representative member for this family based on priority and filing country.
US10074719B2 — Semiconductor device in which an insulated-gate bipolar transistor ( IGBT) region and a diode region are formed on one semiconductor substrate (published Sep 11, 2018)
Member publications
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Semiconductor device
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