Method of forming dielectric films, new precursors and their use in semiconductor manufacturing
US-10217629-B2 · Feb 26, 2019 · US
This patent family groups 5 related publications across US. Members often share priority claims or equivalent filings in different countries.
| Field | Value |
|---|---|
| Family ID | 37192518 |
| Family type | — |
| Earliest priority | Jun 2, 2006 |
| First filing country | US |
| Member publications | 5 |
| Countries | US |
| Representative publication | US10217629B2 — Method of forming dielectric films, new precursors and their use in semiconductor manufacturing |
Best representative member for this family based on priority and filing country.
US10217629B2 — Method of forming dielectric films, new precursors and their use in semiconductor manufacturing (published Feb 26, 2019)
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