Semiconductor device and method of fabricating the same
US-2024014287-A1 · Jan 11, 2024 · US
being parallel to the channel plane
being parallel to the channel plane · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D64/683 |
| Official title | {being parallel to the channel plane} |
| Display label | being parallel to the channel plane |
| Total patents | 743 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 87 |
| 2016 | 102 |
| 2017 | 97 |
| 2018 | 71 |
| 2019 | 63 |
| 2020 | 66 |
| 2021 | 54 |
| 2022 | 48 |
| 2023 | 59 |
| 2024 | 42 |
| 2025 | 43 |
| 2026 | 11 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Bandgap-engineered memory with multiple charge trapping layers storing charge
US-2015371998-A1 · Dec 24, 2015 · US
Device and methods for high-k and metal gate stacks
US-9219125-B2 · Dec 22, 2015 · US
Method of making a gate structure
US-2015357435-A1 · Dec 10, 2015 · US
Method for processing a carrier, a carrier, and a split gate field effect transistor structure
US-9202815-B1 · Dec 1, 2015 · US
Semiconductor device and manufacturing method thereof
US-2015340464-A1 · Nov 26, 2015 · US
Semiconductor device
US-9196726-B2 · Nov 24, 2015 · US
Ldmos with improved breakdown voltage
US-2015325697-A1 · Nov 12, 2015 · US
Lateral oxidation of nfet high-k gate stacks
US-2015318177-A1 · Nov 5, 2015 · US
Semiconductor device dielectric interface layer
US-9177784-B2 · Nov 3, 2015 · US
Multigate dual work function device and method for manufacturing same
US-9171951-B2 · Oct 27, 2015 · US
Replacement metal gates to enhance transistor strain
US-9159566-B2 · Oct 13, 2015 · US
Antifuse otp memory cell with performance improvement, and manufacturing method and operating method of memory
US-2015287730-A1 · Oct 8, 2015 · US
Device Having Sloped Gate Profile and Method of Manufacture
US-2015287798-A1 · Oct 8, 2015 · US
Spacer shaper formation with conformal dielectric film for void free pmd gap fill
US-2015287804-A1 · Oct 8, 2015 · US
Semiconductor device and method for fabricating the same
US-2015287823-A1 · Oct 8, 2015 · US
Nonvolatile memory cell structure with assistant gate
US-2015287732-A1 · Oct 8, 2015 · US
Array substrate, method for manufacturing the same, and display device
US-2015279870-A1 · Oct 1, 2015 · US
Replacement gate structure with low-k sidewall spacer for semiconductor devices
US-2015263120-A1 · Sep 17, 2015 · US
Silicon carbide semiconductor device and method of manufacturing same
US-2015263115-A1 · Sep 17, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D64/683?
- CPC H10D64/683 is the Cooperative Patent Classification code for “being parallel to the channel plane.”
- How many patents are filed under CPC H10D64/683 (being parallel to the channel plane)?
- Our database includes 743 publications tagged with this CPC code.
- Is patent activity under CPC H10D64/683 growing?
- Publication counts under this code: 42 in 2024 vs 43 in 2025 (latest complete years).