Graphene-metal bonding structure, method of manufacturing the same, and semiconductor device having the graphene-metal bonding structure
US-2015364589-A1 · Dec 17, 2015 · US
having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D30/472 |
| Official title | {having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT} |
| Display label | having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT |
| Total patents | 690 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 72 |
| 2016 | 65 |
| 2017 | 61 |
| 2018 | 57 |
| 2019 | 68 |
| 2020 | 53 |
| 2021 | 66 |
| 2022 | 71 |
| 2023 | 52 |
| 2024 | 63 |
| 2025 | 49 |
| 2026 | 13 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor device using 2-dimensional electron gas and 2-dimensional hole gas and method of manufacturing the semiconductor device
US-9214517-B2 · Dec 15, 2015 · US
Graphene-transferring member, graphene transferrer, method of transferring graphene, and methods of fabricating graphene device by using the same
US-9214559-B2 · Dec 15, 2015 · US
Inverted III-nitride P-channel field effect transistor with hole carriers in the channel
US-9196614-B2 · Nov 24, 2015 · US
Sidewall Passivation for HEMT Devices
US-2015318387-A1 · Nov 5, 2015 · US
Field effect transistor
US-2015311329-A1 · Oct 29, 2015 · US
Graphene transistor
US-9171907-B2 · Oct 27, 2015 · US
Graphene based electrodes and applications
US-2015299852-A1 · Oct 22, 2015 · US
Semiconductor device and method of manufacturing the semiconductor device
US-2015303290-A1 · Oct 22, 2015 · US
Delta doping layer in MOSFET source/drain region
US-9166035-B2 · Oct 20, 2015 · US
Switching device
US-2015295073-A1 · Oct 15, 2015 · US
Semiconductor devices with germanium-rich active layers and doped transition layers
US-9159787-B2 · Oct 13, 2015 · US
Graphene Device And Method Of Fabricating A Graphene Device
US-2015287787-A1 · Oct 8, 2015 · US
N-polar iii-nitride transistors
US-2015287785-A1 · Oct 8, 2015 · US
Transistor device with reduced gate resistance
US-9147752-B2 · Sep 29, 2015 · US
Semiconductor device and manufacturing method of the same
US-2015270266-A1 · Sep 24, 2015 · US
Spintronic device
US-2015270376-A1 · Sep 24, 2015 · US
Method for growing epitaxies of a chemical compound semiconductor
US-2015262810-A1 · Sep 17, 2015 · US
Methods of forming iii-v semiconductor structures using multiple substrates, and semiconductor devices fabricated using such methods
US-2015255591-A1 · Sep 10, 2015 · US
Methods of Forming Semiconductor Devices and FinFETs
US-2015255548-A1 · Sep 10, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D30/472?
- CPC H10D30/472 is the Cooperative Patent Classification code for “having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT.”
- How many patents are filed under CPC H10D30/472 (having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT)?
- Our database includes 690 publications tagged with this CPC code.
- Is patent activity under CPC H10D30/472 growing?
- Publication counts under this code: 63 in 2024 vs 49 in 2025 (latest complete years).