SiC semiconductor device
US-12080760-B2 · Sep 3, 2024 · US
having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D12/461 |
| Official title | {having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions} |
| Display label | having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions |
| Total patents | 737 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 71 |
| 2016 | 55 |
| 2017 | 102 |
| 2018 | 116 |
| 2019 | 106 |
| 2020 | 88 |
| 2021 | 81 |
| 2022 | 40 |
| 2023 | 32 |
| 2024 | 22 |
| 2025 | 20 |
| 2026 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Insulated Gate Bipolar Transistor Device, Semiconductor Device and Method for Forming Said Devices
US-2015380533-A1 · Dec 31, 2015 · US
Semiconductor Switching Device with Different Local Threshold Voltage
US-2015372086-A1 · Dec 24, 2015 · US
Semiconductor device and super junction semiconductor device having semiconductor mesas
US-9219143-B2 · Dec 22, 2015 · US
Semiconductor device and an electronic device
US-2015364587-A1 · Dec 17, 2015 · US
Semiconductor Device Having an Insulated Gate Bipolar Transistor Arrangement
US-2015364588-A1 · Dec 17, 2015 · US
Method of Manufacturing a Semiconductor Device Comprising Field Stop Zone
US-2015357229-A1 · Dec 10, 2015 · US
Power Semiconductor Device
US-2015357449-A1 · Dec 10, 2015 · US
IGBT with emitter electrode electrically connected with an impurity zone
US-9209109-B2 · Dec 8, 2015 · US
Semiconductor device
US-9190504-B2 · Nov 17, 2015 · US
IGBT and method of manufacturing the same
US-9190503-B2 · Nov 17, 2015 · US
Semiconductor device
US-9190468-B2 · Nov 17, 2015 · US
Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesas
US-2015325687-A1 · Nov 12, 2015 · US
Super Junction Semiconductor Device having Strip Structures in a Cell Area
US-2015325641-A1 · Nov 12, 2015 · US
Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones
US-2015325688-A1 · Nov 12, 2015 · US
Vertical power MOSFET having planar channel and its method of fabrication
US-9184248-B2 · Nov 10, 2015 · US
MOS type semiconductor device
US-9178049-B2 · Nov 3, 2015 · US
Semiconductor Device Having an Insulated Gate Bipolar Transistor Arrangement and a Method for Forming Such a Semiconductor Device
US-2015303190-A1 · Oct 22, 2015 · US
Switching Device for Power Conversion and Power Conversion Device
US-2015303288-A1 · Oct 22, 2015 · US
High voltage MOSFET diode reverse recovery by minimizing P-body charges
US-9166042-B2 · Oct 20, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D12/461?
- CPC H10D12/461 is the Cooperative Patent Classification code for “having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions.”
- How many patents are filed under CPC H10D12/461 (having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions)?
- Our database includes 737 publications tagged with this CPC code.
- Is patent activity under CPC H10D12/461 growing?
- Publication counts under this code: 22 in 2024 vs 20 in 2025 (latest complete years).