Field-Effect Transistor, and Memory and Semiconductor Circuit Including the Same
US-2015380417-A1 · Dec 31, 2015 · US
the floating gate being an electrode shared by two or more components
the floating gate being an electrode shared by two or more components · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10B41/70 |
| Official title | the floating gate being an electrode shared by two or more components |
| Display label | the floating gate being an electrode shared by two or more components |
| Total patents | 1,151 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 138 |
| 2016 | 131 |
| 2017 | 121 |
| 2018 | 69 |
| 2019 | 54 |
| 2020 | 74 |
| 2021 | 92 |
| 2022 | 114 |
| 2023 | 82 |
| 2024 | 112 |
| 2025 | 134 |
| 2026 | 30 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor device
US-2015364606-A1 · Dec 17, 2015 · US
Semiconductor device and electronic device
US-2015363136-A1 · Dec 17, 2015 · US
Semiconductor memory device
US-2015357473-A1 · Dec 10, 2015 · US
Semiconductor device and method for driving semiconductor device, and electronic device
US-9208849-B2 · Dec 8, 2015 · US
Semiconductor device with a wide-gap semiconductor layer on inner wall of trench
US-9209092-B2 · Dec 8, 2015 · US
Memory device, electronic component, and electronic device
US-2015348608-A1 · Dec 3, 2015 · US
Semiconductor device
US-2015348975-A1 · Dec 3, 2015 · US
Memory circuit
US-9202567-B2 · Dec 1, 2015 · US
Semiconductor device
US-9202546-B2 · Dec 1, 2015 · US
Manufacturing method of semiconductor device
US-2015340505-A1 · Nov 26, 2015 · US
Storage device
US-2015340076-A1 · Nov 26, 2015 · US
Semiconductor device and manufacturing method thereof
US-9196745-B2 · Nov 24, 2015 · US
Manufacturing method of semiconductor substrate and semiconductor device
US-2015332919-A1 · Nov 19, 2015 · US
Semiconductor device
US-9190413-B2 · Nov 17, 2015 · US
Semiconductor device and manufacturing method thereof
US-2015318368-A1 · Nov 5, 2015 · US
Semiconductor device and driving method thereof
US-2015311323-A1 · Oct 29, 2015 · US
Semiconductor memory device
US-9159738-B2 · Oct 13, 2015 · US
Semiconductor device
US-2015279860-A1 · Oct 1, 2015 · US
Semiconductor device
US-2015270288-A1 · Sep 24, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10B41/70?
- CPC H10B41/70 is the Cooperative Patent Classification code for “the floating gate being an electrode shared by two or more components.”
- How many patents are filed under CPC H10B41/70 (the floating gate being an electrode shared by two or more components)?
- Our database includes 1,151 publications tagged with this CPC code.
- Is patent activity under CPC H10B41/70 growing?
- Publication counts under this code: 112 in 2024 vs 134 in 2025 (latest complete years).