NORMALLY-OFF MODE POLARIZATION SUPER JUNCTION GaN-BASED FIELD EFFECT TRANSISTOR AND ELECTRICAL EQUIPMENT
US-2024120404-A1 · Apr 11, 2024 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/475 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 383 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 53 |
| 2016 | 58 |
| 2017 | 43 |
| 2018 | 25 |
| 2019 | 31 |
| 2020 | 31 |
| 2021 | 34 |
| 2022 | 27 |
| 2023 | 36 |
| 2024 | 34 |
| 2025 | 11 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Field effect transistor
US-2016322487-A1 · Nov 3, 2016 · US
Method for Manufacturing a Semiconductor Device Having a Schottky Contact
US-2016276452-A1 · Sep 22, 2016 · US
GaN-based Schottky barrier diode with algan surface layer
US-9450112-B2 · Sep 20, 2016 · US
Method for fabricating semiconductor device and semiconductor device
US-9412829-B2 · Aug 9, 2016 · US
Heterojunction semiconductor device and manufacturing method
US-9349819-B2 · May 24, 2016 · US
Method and system for a gallium nitride self-aligned vertical MESFET
US-9269793-B2 · Feb 23, 2016 · US
Schottky gated transistor with interfacial layer
US-2015357457-A1 · Dec 10, 2015 · US
Compound semiconductor device and manufacturing method therefor
US-9209042-B2 · Dec 8, 2015 · US
Ni-rich Schottky contact
US-9202703-B2 · Dec 1, 2015 · US
AlN single crystal Schottky barrier diode and method of producing the same
US-9190483-B2 · Nov 17, 2015 · US
Semiconductor device and manufacturing method
US-2015325698-A1 · Nov 12, 2015 · US
Semiconductor device and manufacturing method
US-2015325667-A1 · Nov 12, 2015 · US
Gallium nitride power devices using island topography
US-2015318353-A1 · Nov 5, 2015 · US
Fet transistor on a iii-v material structure with substrate transfer
US-2015311330-A1 · Oct 29, 2015 · US
Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode
US-9171923-B2 · Oct 27, 2015 · US
Semiconductor Device And Manufacturing Method Thereof
US-2015295096-A1 · Oct 15, 2015 · US
High Speed Gallium Nitride Transistor Devices
US-2015295075-A1 · Oct 15, 2015 · US
Aluminum gallium nitride etch stop layer for gallium nitride based devices
US-9159784-B2 · Oct 13, 2015 · US
Schottky barrier diode and method of manufacturing the same
US-2015287839-A1 · Oct 8, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/475?
- CPC H01L29/475 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/475 (Electricity)?
- Our database includes 383 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/475 growing?
- Publication counts under this code: 34 in 2024 vs 11 in 2025 (latest complete years).