Semiconductor structure with flush shallow trench isolation and gate oxide and method of manufacturing the same
US-2024395883-A1 · Nov 28, 2024 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L21/308 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 2,123 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 193 |
| 2016 | 238 |
| 2017 | 254 |
| 2018 | 195 |
| 2019 | 224 |
| 2020 | 216 |
| 2021 | 189 |
| 2022 | 169 |
| 2023 | 133 |
| 2024 | 144 |
| 2025 | 147 |
| 2026 | 21 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Methods for passivating sidewalls of semiconductor wafers and semiconductor devices incorporating semiconductor wafers
US-11948803-B2 · Apr 2, 2024 · US
Methods for shallow trench isolation formation in a silicon germanium layer
US-2015371889-A1 · Dec 24, 2015 · US
Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US-2015372077-A1 · Dec 24, 2015 · US
Method for manufacturing a semiconductor device
US-9218984-B2 · Dec 22, 2015 · US
MOS devices having non-uniform stressor doping
US-9209270-B2 · Dec 8, 2015 · US
Method of forming semiconductor device including protrusion type isolation layer
US-2015333151-A1 · Nov 19, 2015 · US
Integrated circuits having improved gate structures and methods for fabricating same
US-2015325482-A1 · Nov 12, 2015 · US
Finfet and method for manufacturing the same
US-2015325699-A1 · Nov 12, 2015 · US
Method of forming well-controlled extension profile in MOSFET by silicon germanium based sacrificial layer
US-9184290-B2 · Nov 10, 2015 · US
Method for creating the high voltage complementary bjt with lateral collector on bulk substrate with resurf effect
US-2015287716-A1 · Oct 8, 2015 · US
Silicon carbide semiconductor device and manufacturing method therefor
US-2015287789-A1 · Oct 8, 2015 · US
Methods of forming transistors
US-9147729-B2 · Sep 29, 2015 · US
Methods of forming fins for FinFET semiconductor devices and selectively removing some of the fins by performing a cyclical fin cutting process
US-9147730-B2 · Sep 29, 2015 · US
Method for integrated circuit patterning
US-9136106-B2 · Sep 15, 2015 · US
Semiconductor device and method of manufacturing the same
US-2015255325-A1 · Sep 10, 2015 · US
Semiconductor transistor structure and fabrication method thereof
US-2015255610-A1 · Sep 10, 2015 · US
Methods of forming germanium-containing and/or III-V nanowire gate-all-around transistors
US-9129938-B1 · Sep 8, 2015 · US
Methods of fabricating a semiconductor device using voids in a sacrificial layer
US-9129903-B2 · Sep 8, 2015 · US
Methods of forming fins for finfet semiconductor devices and selectively removing some of the fins by performing a cyclical fin cutting process
US-2015249127-A1 · Sep 3, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L21/308?
- CPC H01L21/308 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L21/308 (Electricity)?
- Our database includes 2,123 publications tagged with this CPC code.
- Is patent activity under CPC H01L21/308 growing?
- Publication counts under this code: 144 in 2024 vs 147 in 2025 (latest complete years).