Transistor devices having source/drain structure configured with high germanium content portion
US-2018342582-A1 · Nov 29, 2018 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L21/28512 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 167 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 12 |
| 2016 | 15 |
| 2017 | 18 |
| 2018 | 22 |
| 2019 | 23 |
| 2020 | 25 |
| 2021 | 16 |
| 2022 | 16 |
| 2023 | 9 |
| 2024 | 6 |
| 2025 | 5 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method and arrangement for reducing contact resistance of two-dimensional crystal material
US-10141408-B2 · Nov 27, 2018 · US
Methods of forming low band gap source and drain structures in microelectronic devices
US-10115822-B2 · Oct 30, 2018 · US
Graphene film manufacturing method and semiconductor device manufacturing method
US-10079209-B2 · Sep 18, 2018 · US
Semiconductor structure and manufacturing method thereof
US-2018204919-A1 · Jul 19, 2018 · US
Semiconductor manufacturing method and semiconductor manufacturing apparatus
US-10028336-B2 · Jul 17, 2018 · US
Method of making a silicide beneath a vertical structure
US-9966448-B2 · May 8, 2018 · US
Methods of forming semiconductor devices, including forming a contact including an alkaline earth metal on a semiconductor layer, and related devices
US-9966449-B2 · May 8, 2018 · US
Semiconductor structure and manufacturing method thereof
US-9923070-B2 · Mar 20, 2018 · US
Low resistance source-drain contacts using high temperature silicides
US-2018068904-A1 · Mar 8, 2018 · US
Method for manufacturing silicon carbide semiconductor device, method for manufacturing semiconductor base, silicon carbide semiconductor device, and device for manufacturing silicon carbide semiconductor device
US-9911811-B2 · Mar 6, 2018 · US
FinFET low resistivity contact formation method
US-9899521-B2 · Feb 20, 2018 · US
Method for manufacturing silicon carbide semiconductor device, method for manufacturing semiconductor base, silicon carbide semiconductor device, and device for manufacturing silicon carbide semiconductor device
US-2018019307-A1 · Jan 18, 2018 · US
Semiconductor structure containing low-resistance source and drain contacts
US-2018012892-A1 · Jan 11, 2018 · US
Contaminant removal in ultra-thin semiconductor device fabrication
US-2018005818-A1 · Jan 4, 2018 · US
Selective germanium p-contact metalization through trench
US-2017373147-A1 · Dec 28, 2017 · US
Method to improve crystalline regrowth
US-9853055-B2 · Dec 26, 2017 · US
Light emitting device, light emitting device package, light unit, and method of manufacturing same
US-2017352785-A1 · Dec 7, 2017 · US
Semiconductor manufacturing method and semiconductor manufacturing apparatus
US-2017347398-A1 · Nov 30, 2017 · US
Method to improve crystalline regrowth
US-2017287942-A1 · Oct 5, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L21/28512?
- CPC H01L21/28512 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L21/28512 (Electricity)?
- Our database includes 167 publications tagged with this CPC code.
- Is patent activity under CPC H01L21/28512 growing?
- Publication counts under this code: 6 in 2024 vs 5 in 2025 (latest complete years).