Method of etching backside Si substrate of SOI substrate to expose SiO2 layer using fluonitric acid
US-9240505-B2 · Jan 19, 2016 · US
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Ohashi Tomotsugu — Electricity
Ohashi Tomotsugu holds 1 patent in Electricity, with representative filings summarized below.
| Metric | Value |
|---|---|
| Company | Ohashi Tomotsugu |
| Technology | Electricity |
| Patents in slice | 1 |
| Recent patents in slice | 0 |
| First year | 2016 |
| Last year | 2016 |
Representative patents
Notable publications linking Ohashi Tomotsugu to Electricity.
Method of etching backside Si substrate of SOI substrate to expose SiO2 layer using fluonitric acid
US-9240505-B2 · Jan 19, 2016 · US
Method of etching backside Si substrate of SOI substrate to expose SiO2 layer using fluonitric acid
US-9240505-B2 · Jan 19, 2016 · US
Method of etching backside Si substrate of SOI substrate to expose SiO2 layer using fluonitric acid
US-9240505-B2 · Jan 19, 2016 · US
Method of etching backside Si substrate of SOI substrate to expose SiO2 layer using fluonitric acid
US-9240505-B2 · Jan 19, 2016 · US
Recent filings
Latest patents from Ohashi Tomotsugu in Electricity.
Method of etching backside Si substrate of SOI substrate to expose SiO2 layer using fluonitric acid
US-9240505-B2 · Jan 19, 2016 · US
Method of etching backside Si substrate of SOI substrate to expose SiO2 layer using fluonitric acid
US-9240505-B2 · Jan 19, 2016 · US
Method of etching backside Si substrate of SOI substrate to expose SiO2 layer using fluonitric acid
US-9240505-B2 · Jan 19, 2016 · US
Method of etching backside Si substrate of SOI substrate to expose SiO2 layer using fluonitric acid
US-9240505-B2 · Jan 19, 2016 · US
Method of etching backside Si substrate of SOI substrate to expose SiO2 layer using fluonitric acid
US-9240505-B2 · Jan 19, 2016 · US
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