Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same
US-10147873-B2 · Dec 4, 2018 · US
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Lee Joonmyoung — Electricity
Lee Joonmyoung holds 10 patents in Electricity, with representative filings summarized below.
| Metric | Value |
|---|---|
| Company | Lee Joonmyoung |
| Technology | Electricity |
| Patents in slice | 10 |
| Recent patents in slice | 0 |
| First year | 2015 |
| Last year | 2018 |
Representative patents
Notable publications linking Lee Joonmyoung to Electricity.
Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same
US-10147873-B2 · Dec 4, 2018 · US
Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same
US-10147873-B2 · Dec 4, 2018 · US
Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same
US-10147873-B2 · Dec 4, 2018 · US
Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same
US-10147873-B2 · Dec 4, 2018 · US
Recent filings
Latest patents from Lee Joonmyoung in Electricity.
Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same
US-10147873-B2 · Dec 4, 2018 · US
Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same
US-10147873-B2 · Dec 4, 2018 · US
Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same
US-10147873-B2 · Dec 4, 2018 · US
Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same
US-10147873-B2 · Dec 4, 2018 · US
Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same
US-10147873-B2 · Dec 4, 2018 · US
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