ST-RAM cells with perpendicular anisotropy
US-9165625-B2 · Oct 20, 2015 · US
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Zheng Yuankai — Physics
Zheng Yuankai holds 2 patents in Physics, with representative filings summarized below.
| Metric | Value |
|---|---|
| Company | Zheng Yuankai |
| Technology | Physics |
| Patents in slice | 2 |
| Recent patents in slice | 0 |
| First year | 2015 |
| Last year | 2015 |
Representative patents
Notable publications linking Zheng Yuankai to Physics.
ST-RAM cells with perpendicular anisotropy
US-9165625-B2 · Oct 20, 2015 · US
ST-RAM cells with perpendicular anisotropy
US-9165625-B2 · Oct 20, 2015 · US
Magnetic tunnel junction with electronically reflective insulative spacer
US-9030864-B2 · May 12, 2015 · US
Magnetic tunnel junction with electronically reflective insulative spacer
US-9030864-B2 · May 12, 2015 · US
Recent filings
Latest patents from Zheng Yuankai in Physics.
ST-RAM cells with perpendicular anisotropy
US-9165625-B2 · Oct 20, 2015 · US
ST-RAM cells with perpendicular anisotropy
US-9165625-B2 · Oct 20, 2015 · US
ST-RAM cells with perpendicular anisotropy
US-9165625-B2 · Oct 20, 2015 · US
Magnetic tunnel junction with electronically reflective insulative spacer
US-9030864-B2 · May 12, 2015 · US
Magnetic tunnel junction with electronically reflective insulative spacer
US-9030864-B2 · May 12, 2015 · US
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