Vertical non-volatile memory device having channel-accomodating opening formed of etch stop region in lower stack layers
US-10396086-B2 · Aug 27, 2019 · US
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Jang Jae Hoon — Electricity
Jang Jae Hoon holds 4 patents in Electricity, with representative filings summarized below.
| Metric | Value |
|---|---|
| Company | Jang Jae Hoon |
| Technology | Electricity |
| Patents in slice | 4 |
| Recent patents in slice | 0 |
| First year | 2018 |
| Last year | 2019 |
Representative patents
Notable publications linking Jang Jae Hoon to Electricity.
Vertical non-volatile memory device having channel-accomodating opening formed of etch stop region in lower stack layers
US-10396086-B2 · Aug 27, 2019 · US
Vertical non-volatile memory device having channel-accomodating opening formed of etch stop region in lower stack layers
US-10396086-B2 · Aug 27, 2019 · US
Vertical non-volatile memory device having channel-accomodating opening formed of etch stop region in lower stack layers
US-10396086-B2 · Aug 27, 2019 · US
Vertical non-volatile memory device having channel-accomodating opening formed of etch stop region in lower stack layers
US-10396086-B2 · Aug 27, 2019 · US
Recent filings
Latest patents from Jang Jae Hoon in Electricity.
Vertical non-volatile memory device having channel-accomodating opening formed of etch stop region in lower stack layers
US-10396086-B2 · Aug 27, 2019 · US
Vertical non-volatile memory device having channel-accomodating opening formed of etch stop region in lower stack layers
US-10396086-B2 · Aug 27, 2019 · US
Vertical non-volatile memory device having channel-accomodating opening formed of etch stop region in lower stack layers
US-10396086-B2 · Aug 27, 2019 · US
Vertical non-volatile memory device having channel-accomodating opening formed of etch stop region in lower stack layers
US-10396086-B2 · Aug 27, 2019 · US
Vertical non-volatile memory device having channel-accomodating opening formed of etch stop region in lower stack layers
US-10396086-B2 · Aug 27, 2019 · US
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