Group iii semiconductor epitaxy formed on silicon via single crystal ren and reo buffer layers
US-2019122885-A1 · Apr 25, 2019 · US
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Dargis Rytis — Electricity
Dargis Rytis holds 1 patent in Electricity, with representative filings summarized below.
| Metric | Value |
|---|---|
| Company | Dargis Rytis |
| Technology | Electricity |
| Patents in slice | 1 |
| Recent patents in slice | 0 |
| First year | 2019 |
| Last year | 2019 |
Representative patents
Notable publications linking Dargis Rytis to Electricity.
Group iii semiconductor epitaxy formed on silicon via single crystal ren and reo buffer layers
US-2019122885-A1 · Apr 25, 2019 · US
Group iii semiconductor epitaxy formed on silicon via single crystal ren and reo buffer layers
US-2019122885-A1 · Apr 25, 2019 · US
Group iii semiconductor epitaxy formed on silicon via single crystal ren and reo buffer layers
US-2019122885-A1 · Apr 25, 2019 · US
Group iii semiconductor epitaxy formed on silicon via single crystal ren and reo buffer layers
US-2019122885-A1 · Apr 25, 2019 · US
Recent filings
Latest patents from Dargis Rytis in Electricity.
Group iii semiconductor epitaxy formed on silicon via single crystal ren and reo buffer layers
US-2019122885-A1 · Apr 25, 2019 · US
Group iii semiconductor epitaxy formed on silicon via single crystal ren and reo buffer layers
US-2019122885-A1 · Apr 25, 2019 · US
Group iii semiconductor epitaxy formed on silicon via single crystal ren and reo buffer layers
US-2019122885-A1 · Apr 25, 2019 · US
Group iii semiconductor epitaxy formed on silicon via single crystal ren and reo buffer layers
US-2019122885-A1 · Apr 25, 2019 · US
Group iii semiconductor epitaxy formed on silicon via single crystal ren and reo buffer layers
US-2019122885-A1 · Apr 25, 2019 · US
Related pages
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